PART |
Description |
Maker |
UPD23C64000JLGX-XXX UPD23C64000JLGY-XXX-MJH UPD23C |
64M-bit (8M-wordx8-bit/4M-wordx16-bit) Mask ROM
|
NEC
|
IBM13N64734HCA |
64M x 72 Two-Bank Unbuffered SDRAM Module(64M x 64 2组不带缓冲同步动态RAM模块) 64米72双行缓冲内存模组4米64 2组不带缓冲同步动态内存模块)
|
International Business Machines, Corp.
|
IBM13M64734BCA |
64M x 72 1 Bank Registered/Buffered SDRAM Module(64M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|
EBE52UD6ABSA EBE52UD6ABSA-5C-E EBE52UD6ABSA-4A-E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 512MB的DDR2 SDRAM内存的SO - DIMM400字64位,2个等级) 512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
|
Elpida Memory, Inc.
|
UPD23C16300GZ-XXX-MJH UPD23C16300F9-XXX-BC3 |
16M-bit (2M-wordx8-bit/1M-wordx16-bit) Mask ROM
|
NEC
|
HY27US08121A HY27US16121A HY27SS08121A HY27SS16121 |
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63 32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48 32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 32M X 16 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 64M X 8 FLASH 3.3V PROM, 30 ns, PBGA63
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位)
|
Elpida Memory, Inc.
|
HM5164165F HM5164165FJ-6 HM5165165FJ-6 HM5164165FJ |
(HM5164165F / HM5165165F) 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh 6400 EDO公司的DRAM Mword x 16位)8K的refresh/4k刷新
|
Hitachi,Ltd. Hitachi Semiconductor
|
MB82DP04183C MB82DP04183C-65LWFKT MBR0520LT1G SN54 |
64M Bit (4 M word ??16 bit) Mobile Phone Application Specific Memory 64M Bit (4 M word 】 16 bit) Mobile Phone Application Specific Memory Surface Mount Schottky Power Rectifier Plastic SOD?123 Package 18-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS
|
Fujitsu Media Devices Limited ONSEMI TI
|
MX29LV640TXBI-90 MX29LV640TXBI-12 MX29LV640BXBI-12 |
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PDSO48 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PBGA63 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
MT18LSDT6472AIY-133XX MT18LSDT6472AG-133XX MT18LSD |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 LEAD FREE, DIMM-168 64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
|
Unisonic Technologies Co., Ltd.
|
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